GaN nanowires show strong 3D piezoelectric effect
Evanston, IL--Researchers at Northwestern University have reported that individual gallium nitride nanowires (on the order of 100 nm in diameter) show strong piezoelectricity—a type of charge-generation caused by mechanical stress—in three dimensions. The findings were led by Horacio Espinosa, James N. and Nancy J. Farley professor in manufacturing and entrepreneurship at the Northwestern University McCormick School of Engineering and Applied Science and were published online in Nano Letters.
Gallium nitride (GaN) is among the most technologically relevant semiconducting materials and is ubiquitous today in optoelectronic elements such as blue lasers (hence the blue-ray disc) and light-emitting-diodes (LEDs). More recently, nanogenerators based on GaN nanowires were demonstrated capable of converting mechanical energy (such as biomechanical motion) to electrical energy.
"Although nanowires are one-dimensional nanostructures, some properties—such as piezoelectricity, the linear form of electro-mechanical coupling—are three-dimensional in nature," Espinosa said. "We thought these nanowires should show piezoelectricity in 3D, and aimed at obtaining all the piezoelectric constants for individual nanowires, similar to the bulk material."
The findings revealed that individual GaN nanowires as small as 60 nm show piezoelectric behavior in 3D up to six times of their bulk counterpart. Since the generated charge scales linearly with piezoelectric constants, this finding implies that nanowires are up to six times more efficient in converting mechanical to electrical energy.
To obtain the measurements, researchers applied an electric field in different directions in single nanowire and measured small displacements, often in the picometer range. The group devised a method based on scanning-probe microscopy leveraging high-precision displacement measurement capability of an atomic force microscope.
"The measurements were very challenging, since we needed to accurately measure displacements 100 times smaller than the size of the hydrogen atom," said Majid Minary, a postdoctoral fellow and the lead author of the study.
These results are exciting especially considering the recent demonstration of nanogenerators based on GaN nanowires, for powering of self-powered nanodevices.
SOURCE: Northwestern University; www.mccormick.northwestern.edu/news/articles/article_1025.html
Gail Overton | Senior Editor (2004-2020)
Gail has more than 30 years of engineering, marketing, product management, and editorial experience in the photonics and optical communications industry. Before joining the staff at Laser Focus World in 2004, she held many product management and product marketing roles in the fiber-optics industry, most notably at Hughes (El Segundo, CA), GTE Labs (Waltham, MA), Corning (Corning, NY), Photon Kinetics (Beaverton, OR), and Newport Corporation (Irvine, CA). During her marketing career, Gail published articles in WDM Solutions and Sensors magazine and traveled internationally to conduct product and sales training. Gail received her BS degree in physics, with an emphasis in optics, from San Diego State University in San Diego, CA in May 1986.