Eagleyard Photonics to showcase broad area semiconductor laser diode at SPIE Photonics West 2016
An 808 nm broad-area semiconductor laser diode delivers 20 W peak power under pulsed operation from a single emitter for high-resolution sensing applications in extreme harsh environments. Specifications include a 10 µs pulse width at a 25 kHz repetition rate, and an operating temperature range from -40° to 80°C. A version with fast axis collimation (FAC) is also available.
SPIE Photonics West booth number: 932
To Learn More:
Contact: Eagleyard Photonics
Headquarters: Berlin, Germany
Product: 808 nm broad-area semiconductor laser diode
Key Features: 10 µs pulse width
What Eagleyard Photonics says:
View more information on the 808 nm broad-area semiconductor laser diode.
View More Products
Locate a vendor or system integrator in our Buyer's Guide.
Share new products that you think are particularly interesting or helpful by contacting Lee Dubay, Associate Editor, Laser Focus World.
LFW Staff
Published since 1965, Laser Focus World—a brand and magazine for engineers, researchers, scientists, and technical professionals—provides comprehensive global coverage of optoelectronic technologies, applications, and markets. With 80,000+ qualified print subscribers in print and over a half-million annual visitors to our online content, we are the go-to source to access decision makers and stay in-the-know.