Hamamatsu to show InGaAs image sensor for NIR imaging at SPIE DSS 2014
Featuring 64 × 64 pixels and 50 µm pixel pitch, the G11097-0606S is a TE-cooled indium gallium arsenide (InGaAs) image sensor that has uses in most near-infrared (NIR) imaging applications that currently use more expensive, higher density image sensors. Applications include thermal imaging, laser beam profiling, and NIR inspection. Its hybrid structure consists of a back-illuminated InGaAs photodiode array bump-bonded to a CMOS readout circuit. The InGaAs photodiode array is sensitive to 950–1700 nm wavelengths, with peak sensitivity at 1550 nm.
SPIE DSS booth number: 546
To Learn More:
Contact:Hamamatsu
Headquarters: Bridgewater, NJ
Product: G11097-0606S InGaAs image sensor
Key Features: 950–1700 nm sensitivity and TE cooling
What Hamamatsu says:
View more information on the G11097-0606S InGaAs image sensor.
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