OSI Laser Diode avalanche photodiode features low dark current

    March 29, 2017
    The LAPD 3050 indium gallium arsenide avalanche photodiode module is designed for light-level detection and signal transmission applications.
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    The LAPD 3050 indium gallium arsenide (InGaAs) avalanche photodiode module is designed for light-level detection and signal transmission applications. The device has a 50 μm active area and features low dark current, low back reflection, and 2.5 GHz speed in a miniature three-pin coaxial package. Typical operational wavelength is 1550 nm.
    OSI Laser Diode
    Edison, NJ
    www.laserdiode.com

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