Lasers & Sources

Diode laser system offers processing temperature monitoring

Nov. 29, 2021

The DLight S diode laser system for laser wafer annealing generates a 70 μm narrow line laser beam with an aspect ratio of 160:1.

The DLight S diode laser system for laser wafer annealing generates a 70 μm narrow line laser beam with an aspect ratio of 160:1. It offers continuous energy output up to 1800 W/mm², for >95% beam uniformity and >98% output power stability. It also has processing temperature monitoring and in situ detection of output beam quality.

Focuslight Technologies

Xi’an, China

focuslight.com

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