Reaction-bonded silicon carbide ceramic material has use in power electronics

    April 1, 2021
    A new grade of proprietary reaction-bonded silicon carbide (RB SiC) ceramic material achieves thermal conductivity of 255 W/(m-K) at 25ºC.
    Ii Vi 6063677b8be59

    A new grade of reaction-bonded silicon carbide (RB SiC) ceramic material achieves thermal conductivity of 255 W/(m-K) at 25ºC. Designed for power electronics applications, including IGBT baseplates, the lightweight material maintains high stiffness.

    II-VI Incorporated

    Saxonburg, PA

    ii-vi.com

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