Discovery Semiconductors uncooled IR photodiodes handle current up to 15 mA

Oct. 9, 2012
The 2.2 μm cutoff, uncooled, InGaAs high-speed photodiodes are hermetically sealed, fiber pigtailed, and designed for high optical-power applications with minimum bandwidths of 10, 14, and 18 GHz, respectively.

The 2.2 μm cutoff, uncooled, InGaAs high-speed photodiodes are hermetically sealed, fiber pigtailed, and designed for high optical-power applications with minimum bandwidths of 10, 14, and 18 GHz, respectively. They handle current up to 15 mA, have typical polarization-dependent loss of 0.05 dB, and cover a range of 1200 to 2200 nm.
Discovery Semiconductors
Ewing, NJ

www.discoverysemi.com

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PRESS RELEASE

High Speed Uncooled 2.2 Micron Wavelength InGaAs Photodiodes to 20GHz

The 2.2 micron cutoff, uncooled, InGaAs high speed photodiodes are hermetically sealed, fiber pigtailed, and designed for high optical power applications with minimum bandwidths of 10, 14 and 18 GHz, respectively. The devices are well suited for applications using fiber amplifiers, and are available in either a K-connector package or a miniature surface mount package with CPW (coplanar waveguide) RF output, and utilizes Discovery’s high-reliability InGaAs photodiode technology.

Salient Features:

High Current Handling (up to 15 mA)
Lowest PDL (typical 0.05 dB)
Useable spectral wavelength range 1200 – 2200 nm
Low Group Delay
K-connector or surface mount package options
One device for multiple wavelengths reduces operational & inventory costs

Applications:

Fiber Laser Systems at 2.05 Micron
High Dynamic Range, Analog RF Links over Fiber
Rapid Doppler-Shift LIDAR measurements
Coherent Lightwave Systems
Ideal Front-End O/E Converter for Test Instruments
Environmental Sensing
Time Resolved Spectroscopy
Free Space Communications

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